DFN1411-3, Diodes Incorporated
Tiny transistors from Diodes Incorporated aid product miniaturisation
News Release from:
Diodes Incorporated
17 June 2010
In the ultra-small DFN1411-3 surface mount package, 20V NPN and PNP bipolar transistors announced by Diodes Incorporated deliver a dramatic increase in the power density and efficiency of power management circuits. The transistors have been designed on Diodes' Generation 5 matrix emitter Bipolar process.
With a footprint measuring just 1.1mm x 1.4mm and an off-board height of 0.5mm, the complementary ZXTN26020DMF and ZXTP26020DMF devices enable portable product miniaturization while offering improvements in both electrical and thermal performance.
Suiting MOSFET and IGBT gate driving, DC-DC conversion and general switching duties, the miniature transistors are a space-saving alternative to much larger SOT23 packaged parts and provide excellent thermal performance, having a minimum FR-4 PCB power dissipation rating of 0.38W for its footprint.
High gain, low saturation and fast switching devices, the bipolars are also characterized by a very high continuous current handling capability. The maximum collector current ratings of 1.5A for the NPN and -1.25A for the PNP are not available from any smaller package device.
