Flash, MONOS, Renesas

Renesas Technology to present high-speed, high-reliability MONOS Flash Technology at Embedded World Conference

News Release from: Renesas Technology Europe Ltd
07/02/2008

Renesas Technology developed the award-winning MONOS (metal-oxide-nitride-oxide-silicon) high-speed embedded Flash Technology to achieve 10ns read access time in its latest 90nm process generation.

MONOS Flash is also inherently highly reliable and suitable for high temperature operation beyond 150 degrees C. MONOS Flash is winning projects around the world in applications such as engine management, industrial inverters and even white goods (motor control, induction hobs, pumps, HVAC, etc). It enables:

• Performance of over 300 DMIPS executing code from internal MONOS Flash when combined with Renesas modern SH-2A CPU core.
• Extremely fast interrupt response times of just 40ns.
• Highly deterministic behaviour.
• Very wide temperature operation for all modes (read, write, erase).

MONOS Flash is time-proven over 5 years now and has earned the trust of even the most critical automotive manufacturers.

R&D managers, development engineers, QA experts and technical editors should not miss this rare opportunity to listen to Mr. Matsubaras explanations on the ‘Embedded World Conference’ on 28th February, starting from 9.15am. To attend please register for Session 17 ‘Memory in Embedded Systems’ of the conference.