|
Search
Useful Links  |
MemoryRamtron Granted Fundamental Ferroelectric RAM PatentRamtron announced today the issuance of U.S. Patent No. 7,672,151 entitled Method for Reading Non-volatile Ferroelectric Capacitor Memory Cell. The patent materially expands Ramtron's intellectual property portfolio. 
STMicroelectronics Launches New Dual-Interface EEPROM Enabling Remote Access to Electronic Device ParametersSTMicroelectronics (NYSE: STM), a world leader in RF Memory and EEPROM ICs, has announced sample availability of the first in a new family of products that provide the flexibility to remotely program or update electronic products, anytime during their lifetime, and anywhere in the supply chain. The new devices enable manufacturers to update parameters, regionalize or activate software without connecting a programmer, or even opening the retail packaging. This pioneering way to access the memory will allow businesses to add new functions and capabilities to their products, but also reduce manufacturing costs, simplify inventory management, and respond more quickly to changing market demands. APRO teams with ProSaleTech and PST to accelerate European expansionAPRO, Taiwan's leading manufacturer of industrial-grade NAND Flash storage devices, has teamed with European Flash memory specialists, ProSaleTech and Phoenix Systems Engineering & Technologies (PST), in order to expand and strengthen its presence in the European market. 
Toshiba to enhance line-up of 32nm multi-level cell SSDsToshiba Corporation has announced an expanded line-up of NAND-flash-based solid state drives based on the company's 32nm Multi-Level- Cell NAND flash memories. The new drives include the industry's first 128-gigabyte Half-Slim /mSATA SG Series SSD modules, ideally suited for a variety of applications including mini-mobile and netbook PCs, and the HG Series that delivers all the high level performance and endurance essential for notebook computers and for gaming and home entertainment systems. 
Toshiba Launches Highest Density Embedded NAND Flash Memory ModulesToshiba Corporation has announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a new line-up of six embedded NAND flash memory modules that offer full compliance with the latest e•MMC TM standard, and that are designed for application in a wide range of digital consumer products, including smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010. 
Macronix claims World’s First 256Mbit Serial FlashMacronix International continues its leadership and innovation in the Serial Flash market by announcing the world's first 256-megabit(Mbit) Serial Flash product. This new 256Mbit product, MX25L25635E, will allow system designers and manufacturers to offer greater functionality and performance in their products. 
SST - Low-Voltage, High-Speed Quad I/O Serial Flash MemorySST today announced the industry's first 1.8V, high-speed quad-bit serial flash memory. Featuring an 80 MHz operating frequency and a specialized instruction set, the new 26WF Series Serial Quad I/O (SQI) family of 4-bit multiplexed I/O serial interface devices enables execute-in-place (XIP) capability, allowing programs to be stored and executed directly from the flash memory without the need for code shadowing on an SRAM. 
Cypress Claims First 65-nm 144-Mbit SRAMsCypress Semiconductor has announced the industry's first monolithic SRAMs at 144-Mbit densities, the latest members of its 65-nm SRAM family. The new 144-Mbit QDRII, QDRII , DDRII and DDRII memories leverage 65-nm process technology developed with foundry partner UMC. They feature the market's fastest available clock speed of 550 MHz and a total data rate of 80 Gbps in a 36-bit I/O width QDRII device, and consume half the power of 90-nm SRAMs. 
Cypress Expands Leading Non-Volatile SRAM Portfolio with New Serial Family And Adds Integrated Real-Time Clock CapabilityCypress Semiconductor has introduced a new 1-Mbit Serial non-volatile Static Random Access Memory (nvSRAM) family and new 4-Mbit and 8-Mbit nvSRAMs with an integrated real-time clock (RTC). Cypress's nvSRAMs are manufactured on its S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded non-volatile memory technology, enabling greater densities and improved access times and performance. nvSRAMs are ideal solutions for applications requiring absolute non-volatile data security such as RAID systems, industrial control and automation (e.g. PLCs, motion control, motor drives and robotics), single board computers, POS terminals, eMetering, automotive, medical and data communication systems. 
AGIGA Tech Claims Highest-Density Battery-Free Non-Volatile RAM System for Applications Needing Critical Data Back-UpAGIGA Tech Inc., a subsidiary of Cypress Semiconductor Corp., today introduced what it says is the market's highest-density, high-speed non-volatile RAM system. The AGIGARAM non-volatile system's (NVS) new CAPRI family delivers densities between 256 megabytes (2048 megabits) and 2 gigabytes (16 gigabits). The easy-to-use, turnkey family leverages a DDR2 SDRAM interface to deliver speeds up to 800 MHz with peak transfer rates equivalent to DRAMs. Pulsic tools deployed by Toshiba Corporation for layout of next generation Flash MemoryPulsic Limited has announced that Toshiba Corporation will be extending its deployment of Pulsic tools and services in order to maximize efficiency and quality of results for the layout of their next generation Flash Memory designs. ACAL Technology cuts SRAM lead-times and future-proofs designs against loss of supplyACAL Technology announce a new cross-matching service designed to eliminate extended lead-times for high-speed SRAM, and to future-proof designs by second-sourcing fit, form and function alternatives to virtually any existing SRAM. 
Ramtron extends V-Family product line with serial 256-Kilobit F-RAMRamtron International Corporation, the leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, has announced two new serial nonvolatile F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The 256-Kilobit (Kb) devices, which are part of Ramtron's V-Family of F-RAM products, include the FM24V02, a two-wire (I2C) interface and the FM25V02 with serial peripheral interface (SPI). 
Ramtron - 8-Megabit parallel nonvolatile F-RAM memoryRamtron has announced the availability of its 8-Megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM23MLD16 is an 8-Mbit, 3-volt, parallel nonvolatile RAM in a 48-pin Fine-Pitch Ball Grid Array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM23MLD16 targets industrial control systems such as robotics, network RAID storage solutions, multi-function printers, auto navigation systems, and a host of other SRAM-based system designs. 
Renesas Introduces SRAM Family with Fast Operating Speed for Next-generation Communication NetworksRenesas Technology Europe has announced the 72-Mbit Quad Data Rate II+ (QDR II+) and Double Data Rate II+ (DDRII+) high-speed SRAM product family for use in high-end routers and switches in next-generation communication networks. These SRAM products achieve the industry's fastest operating speed and are compliant with the QDR Consortium industry standard. The new family also includes 72-Mbit QDRII and DDR II SRAM devices. The full range of devices, consisting of multiple speeds and configurations, will be introduced from August 2009. 
STMicroelectronics Delivers 512-Kbit Serial EEPROMs in 2 x 3mm Package OutlineSTMicroelectronics has leveraged its advanced non-volatile memory technology to deliver an industry first with two new 512-Kbit devices that offer the highest density memories available in the industry-standard 2 x 3 x 0.6mm 8-pin Micro Leadframe Package (MLP). Pin compatibility with memories of lower density allows designers to upgrade products quickly and efficiently by changing devices without redesigning the board. 
Ramtron expands F-RAM Serial memory line with 32-Kilobit deviceRamtron International has announced the FM24CL32, a serial nonvolatile RAM that offers high-speed read/write performance, low voltage operation, and superior data retention. The FM24CL32 features 32Kb nonvolatile memory, 2.7 to 3.6-volt operation in an 8-pin SOIC package that uses two-wire (I2C) protocol. The FM24CL32 features fast access, NoDelay writes, virtually unlimited read/write cycles (1E14), and low power consumption. The FM24CL32 is a direct hardware replacement for serial EEPROM memory used in industrial controls, metering, medical, military, gaming, and computing applications, among others. 
Ramtron gets Grade 1 automotive qualification for nonvolatile state saversRamtron International has announced that two of its nonvolatile state savers, the FM1105-GA and FM1106-GA, have received AEC-Q100 Grade 1 qualification. The state saver device saves the state of signals on demand and restores them to the correct state automatically upon power up. F-RAM technology uniquely enables this capability due to its fast write time, virtually unlimited write endurance, and low-power requirements. Toshiba to launch world’s first 32nm process NAND flash memoryToshiba will reinforce its leadership in the development and fabrication of high density NAND flash memory when it starts shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit single chips, offering the largest density of any NAND flash chip, are available from today, and 16Gb chip products, the current mainstream density, will be available in July in Japan. The 32Gb chips will first be applied to memory cards and USB memories and subsequently extended to embedded products. 
Power efficient 512-Kilobit and 1-Megabit Serial F-RAM V-Family memoryRamtron has launched two more devices in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest devices in Ramtron's V-Family of F-RAM products are the 512-Kilobit FM24V05, and the 1-Megabit FM24V10. The new products are 2.0 to 3.6-volt, serial nonvolatile RAMs in 8-pin SOIC packages that use the two-wire (I2C) protocol. 
Microchip Expands Serial EEPROM Product LineMicrochip announces several new I2C serial EEPROM devices in small packages. The company has unveiled a series of 4, 64 and 128kbit serial EEPROMs in a innovative Waver-Level Chip Scale Package (WLCSP). Additionally, the company introduced the industry's first 1 and 2kbit I2C serial EEPROMs in a 5-pin SC-70 package, and the industry's first 32 and 64kbit serial EEPROMs in a 5-pin SOT-23 package. The small, innovative devices complement industry trends towards smaller and more sophisticated designs and are ideal for a wide range of portable and consumer-electronic applications. 
Microchip Claims Industry’s Lowest Voltage EEPROM DevicesMicrochip has announced a series of I2CTM EEPROM devices with the lowest operating voltage available on the market. The 24VLXX series of devices has an operating voltage down to 1.5V for both read and write operations, with a very low operating current of less than 400µA. Toshiba Advances NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technologyToshiba has announced breakthroughs in multi-bit-per-cell technology for NAND flash memories that will bring advances in chip densities and cost savings to next generation devices. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb) chip with the world-smallest die size, and smaller than a 2-bit-per-cell 16Gb chip fabricated with 43nm technology, which is currently in the market. The cutting-edge chip will be mass produced in the second half of CY2009. The company has also fabricated the world's first 64Gb chip that applies 4-bit-per-cell technology at the 43 nm process generation. Ramtron's foundry agreement with IBMU.S. semiconductor maker Ramtron has announced that it has entered into a foundry services agreement with IBM. The companies plan to install Ramtron's F-RAM semiconductor process technology in IBM's Burlington, Vermont, advanced wafer manufacturing facility. Once installed, the new foundry supply will serve as a foundation for the introduction of new and cost effective high-performance F-RAM semiconductor products. Innovative Silicon To Present Floating Body Memory Array Results At ISSCCInnovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology has announced the upcoming delivery of a presentation titled "A 2ns-Read-Latency 4MB Embedded Floating Body Memory Macro in 45nm SOI Technology" in collaboration with AMD at the International Solid State Circuits Conference (ISSCC). 
Ramtron announces low power 256-Kilobit Serial F-RAMRamtron has announced the FM24L256, a 256Kb, 2.7- to 3.6-volt nonvolatile F-RAM memory device with a high-speed serial I2C memory interface. The FM24L256 provides high-performance data collection in a tiny, 8-pin package, cutting costs and board space in a range of applications from multi-function printers to industrial motor controllers. 
Ramtrom's FM22LD16 FBGA package option for 4-megabit parallel nonvolatile F-RAM memoryRamtron has announced the availability of its 4-megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM22LD16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 48-pin ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22LD16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. Ramtron's 4Mb parallel F-RAM is also available in a 44-pin thin small outline plastic (TSOP) package. 
Microchip's Stand-Alone Serial SRAM DevicesMicrochip has announced a family of 8- and 32-kByte stand-alone serial SRAM devices designed to increase a system's available RAM through adding small, inexpensive external devices. The 23A640, 23K640 (23 x 640), 23A256 and 23K256 (23 x 256) devices feature a familiar, industry standard SPI interface, providing increased design flexibility while reducing design and production costs. 
Toshiba, IBM, and AMD Claim World’s Smallest FinFET SRAM Cell with High-k/Metal GateToshiba Corporation, IBM, and AMD have announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs). 
Serial EEPROMs With Built-in MAC Addresses From MicrochipMicrochip has announced a family of serial EEPROM devices with built-in EUI-48 and EUI-64 compatible MAC addresses. Designed to work on standard buses, such as SPI, I2C and the UNI/O bus, the devices provide easy and inexpensive access to MAC addresses and feature up to 1.5Kbit of EEPROM that can be used for storing configuration and user settings, or as a scratch-pad area for buffering small amounts of data. 
16GB microSDHC from ToshibaToshiba Electronics Europe (TEE) has reinforced its memory card line-up with the launch of a 16GB microSDHC card offering the largest capacity available in the market. At the same time, the company extended its range of industry-leading memory card solutions by adding ultra fast read/write 8GB and 16GB SDHC cards to its line-up. Mass production of the new SDHC cards will start in December, with production of the new microSDHC due to start in January 2009. 
Ramtron adds serial 512-kilobit F-RAM to V-Family product lineRamtron International has announced the second serial device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The FM25V05 is a 512-kilobit (Kb), 2.0V to 3.6V, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay writes, 1E14 read/write cycles, and low power consumption. The FM25V05 is an ideal alternative to serial Flash and serial EEPROM memory in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the 512Kb FM25V05, the recently announced 1-megabit FM25V10 is also available. 
Ramtron announces faster and power flexible 1-megabit parallel F-RAMRamtron International Corporation today launched the first parallel device in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest device in Ramtron's V-Family of F-RAM products is the FM28V100, a 1-megabit (Mb), 2.0V to 3.6V, parallel nonvolatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay™ writes, virtually unlimited read/write cycles, and low power consumption. The FM28V100 is an ideal upgrade from 1Mb battery-backed SRAM in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the FM28V100, Ramtron recently announced the 512Kb FM25V05 and 1Mb FM25V10 serial SPI V-Family products. 
Renesas Technology develops SRAM for automotive applicationsRenesas Technology Europe today announced that it has commenced development of low power and fast SRAM products that are specifically suited to automotive applications. They are available as 4, 16, or 32Mbit low power SRAM and 4Mbit fast SRAM devices. Sample shipments will commence during June 2009 followed by mass production during July 2009. 
Toshiba to launch 43nm SLC NAND Flash memoryToshiba has announced the launch of a new line-up of 43nm single-level cell (SLC) NAND Flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first quarter of 2009. 
Toshiba launches USB Flash Drives with new design and higher capacitiesToshiba Electronics Europe has announced the introduction of a new range of USB flash memory drives that feature a redesigned case and a maximum memory capacity of 16GByte, double that of existing products. The stylish design is shorter than previous models and also more robust. The drives will be showcased at the GITEX Technology Week in Dubai. Innovative Silicon Unveils Z-RAM Memory Technology BreakthroughsInnovative Silicon has demonstrated that its Z-RAM memory technology continues to show considerable advantages over DRAM implementations and other proposed floating body memory designs. Dr. Mikhail Nagoga, a principal member of ISi's technical staff, presented a paper written by Dr. Serguei Okhonin, chief scientist at ISi, that describes the smallest silicon dynamic memory devices ever reported, with the largest programming window. Separately, Dr. Ammar Nayfeh, a member of ISi's technical staff, presented a paper that discusses improvements in Z-RAM memory retention times and a reduction in leakage current. Ramtron announces 1-megabit serial F-RAMRamtron International has announced the first device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The first device in Ramtron's V-Family of F-RAM products is the FM25V10, a 1-megabit (Mb), 2.0 to 3.6-volt, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay™ writes, 1E14 read/write cycles, and low power consumption. 
SST Expands 1.8V Serial Flash Product PortfolioSST (Silicon Storage Technology, Inc.) today announced the SST25WF040 device, the company's newest addition to its widely adopted 1.8V 25WF Series SPI serial flash memory family. The 4-Mbit, small form factor SST25WF040 is ideal for battery-powered, space- and height-constrained mobile applications where performance, reliability and low-power consumption are crucial to product success. The SST25WF040 continues SST's commitment to provide the industry with innovative flash memory technology that addresses the unique design requirements of the high-volume portable electronics market. New Toshiba SD card range delivers premium quality and performance for consumer and professional needsToshiba Electronics Europe has announced the launch of a new range of SD format Flash memory cards that offer the widest choice for all uses from premium consumer applications to high-speed professional requirements. 
64-kilobit serial F-RAM memory specified to AEC-Q100 automotive standards from RamtronRamtron International has expanded its line of AEC-Q100-specified F-RAM memory devices, qualifying the FM24CL64 64-kilobit (Kb) serial F-RAM to operate over the Grade 3 automotive temperature range of -40ºC to +85ºC. The FM24CL64 is part of Ramtron's growing family of Grade 1 (+125ºC) and Grade 3 AEC-Q100-qualified automotive memory products. F-RAM replaces EEPROM for faster writes at lower power in safe, explosion-proof productRamtron International has announced that China's Shanghai Welltech Automation Co., Ltd., a leading pressure transmitter and magnetic flow meter supplier, has designed Ramtron's FM25L16 16-kilobit (Kb) serial F-RAM memory device into its 2000S safe pressure transmitters. F-RAM was selected to replace EEPROM in Welltech's new, intrinsically safe, explosion-proof transmitters. 
Serial EEPROM Family from Microchip Uses Single I/O BusMicrochip has announced a family of serial EEPROM devices with a single I/O bus interface. The 11XX010, 11XX020, 11XX040, 11XX080 and 11XX160 are the first single I/O EEPROM devices that can support data rates from 10 kHz to 100 kHz; and the only 1, 2, 4, 8 and 16 Kbit EEPROMs available in a 3-pin SOT-23 package (in addition to other higher pin count packages). The new devices also include advanced such as status registers; software write protection for ¼, ½ or full array; noise filtering, and robust ESD protection for the highest reliability. 
Ramtron launches 2-Megabit Serial F-RAMRamtron International has unveiled the industry's first 2-megabit serial F-RAM memory in an 8-lead TDFN (5.0 x 6.0 mm) package. Manufactured on an advanced 130 nanometer CMOS process, the FM25H20 is a high-density nonvolatile F-RAM memory that operates at low power and features a high-speed serial peripheral interface (SPI). The 3-volt, 2Mb serial F-RAM writes at maximum bus speed with virtually unlimited endurance for greater data collection capacity in a tiny package, enabling system designers to reduce costs and board space in a range of advanced applications including meters and printers. 
Ramtron's 64-kilobit F-RAM enhanced processor companion with embedded 32kHz crystalRamtron International has launched the FM3135, a 64-kilobit (Kb), 3-volt Processor Companion product that combines the benefits of nonvolatile F-RAM memory with an enhanced real-time clock/calendar (RTC) and integrated 32kHz watch crystal. 
High-Endurance Industrial-Grade NANDrive from SSTSST (Silicon Storage Technology, Inc.) has announced three additions to its NANDrive family of ATA solid-state storage devices. The new 512 MByte, 1 GByte and 2 GByte NANDrive products are capable of operating at industrial temperature ranges, making them compelling storage options for industrial applications operating in harsh environments, including medical equipment, factory automation and in-cabin automotive electronics. 
Toshiba Launches Solid State Drives with MLC DevicesToshiba Electronics Europe has announced its entry into the emerging market for NAND-flash-based solid state drive (SSD) with a series of products featuring multilevel-cell (MLC) NAND flash memories. Offered in a range of form factors and densities, Toshiba's solid state drives are designed primarily for notebook PCs. They will be showcased at the Consumer Electronics Show in Las Vegas, from January 7th to 10th. Samples and mass production will follow from the first quarter (January to March) of next year. 
Grade 1 automotive F-RAM memory devices from RamtronRamtron International has added another 4 kilobit (Kb) F-RAM memory device to its Grade 1 AEC-Q100-qualified automotive product line, growing its number of +125ºC parts to five. The FM25040A-GA – a 4Kb, 5V F-RAM with a high-speed serial peripheral interface (SPI) – is now specified to operate at +125ºC and is guaranteed to retain data for 9,000 hours at that extreme temperature. 
Ramtron’s F-RAM wins EDN China’s Industry Innovation awardRamtron International Corporation has announced that it has received the Leading Product accolade in this year's prestigious EDN China Innovation Awards. Ramtron's FM22L16, the semiconductor industry's first 4-megabit (Mb) nonvolatile F-RAM memory, was selected by a panel of judges and thousands of EDN China readers as a Leading Product in the Digital IC and Digital Logic category. Innovative Silicon Wins Prestigious Audemars Piguet “Changing Times Award”Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), has announced that it has won the Audemars Piguet 2007 "Next Gem" award, one of three awards within the Audemars Piguet "Changing Times Award" program. The "Next Gem" award is given to the private company with the most promising future of making the biggest impact, on the largest number of people, in the least amount of time. 
Embedded-FRAM device for digital TV enables simultaneous use of 4-channel HDMI connector portsFujitsu Microelectronics Europe has announced the development of what it says is the world's first embedded-FRAM device for digital TVs that enables simultaneous use of four-channel High-Definition Multimedia Interface connector ports - for connecting devices such as multiple DVD recorders, camcorders, and video game consoles – and which stores display data, such as resolution, that is read by audio-visual digital entertainment devices when they are used with digital TVs. 
FRAM memory device qualified to +125ºC for intelligent powertrain applicationsRamtron International has expanded its line of +125 degreesC FRAM memory automotive devices. The FM25L04-GA , a 4Kb, 3 volt, serial peripheral interface (SPI) FRAM, is now Grade 1 AEC-Q100-specified to operate over the automotive temperature range of -40ºC to +125ºC and is guaranteed to retain data for 9,000 hours at that extreme temperature. FRAM memory designed into fimicro's PC/104-compliant single board computer and smart I/O modulesRamtron International has announced that German-based embedded hardware and software provider, fimicro, has integrated non-volatile FRAM memory into its new active104 series of PC/104-compliant single board computer (SBC) and smart I/O extension modules. 
Ramtron expands high density FRAM family with a 2-megabit deviceRamtron International has extended its family of high density FRAM devices with a 2-megabit parallel memory device. The FM21L16 is a 2Mb, 3-volt, parallel non-volatile FRAM in a 44-pin TSOP-II package that features fast access, NoDelay writes, virtually unlimited read/write cycles, and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM21L16 targets SRAM-based industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. 
Toshiba Adds New 32GB and 16GB High Density SDHC Cards and 8GB microSDHC Card to Extensive Memory Card Line-upToshiba Electronics Europe has reinforced its line-up of SD High Capacity (SDHC) cards with three new cards, including the world's first 32-gigabyte (GB) memory card in this high density. Alongside the 32GB SDHC card, Toshiba also announced a 16GB SDHC card and an 8GB microSDHC card. All the new cards meet the Class 4 specification in the SD Speed Class, ensuring they deliver the high level performance and functionality essential for advanced mobile phones and other personal digital products. 
STMicroelectronics Guarantees Full-Speed Operation of 32-Mbit Serial Flash Memory with Dual I/OSTMicroelectronics has announced the availability of the new M25PX32, a 32-Mbit device that is the first of the sector, sub-sector erase Serial Flash family to be offered with Dual I/O. Whereas existing M25PE family devices features high granularity, the new M25PX family stands out thanks to its guaranteed high-speed performance. FRAM memory designed into DSP-based digital car audio system for Renault Samsung MotorsRamtron International has announced that Daesung-Eltec Co. Ltd. of Korea has designed FRAM memory into its new digital signal processing (DSP)-based car audio platform. Daesung-Eltec selected the FM24C64 - a 64-kilobit FRAM with 2-wire serial interface – to enable sophisticated memory functions such as storing audio, channel and favourite artist/song settings, as well as the resume play and the favourite artist/song alert features. FRAM's non-volatility, No Delay writes, virtually limitless endurance, small footprint and cost effectiveness make it the ideal memory technology for advanced digital automotive audio systems. 
NAND Controllers for Mobile Storage ApplicationsAddressing the performance, compatibility, functionality and reliability needs of solid state mass storage solutions, SST (Silicon Storage Technology) has announced that it is expanding its NAND controller offerings with two new NAND controllers, the ATA Flash Disk Controller (SST55VD020) and the CompactFlash Card Controller (SST55LC200). Featuring an advanced error correction code (ECC) engine, these high-performance controllers are well positioned for managing current and future high-density NAND flash requirements. SST SuperFlash-based embedded firmware allows for firmware updates before, during and after manufacturing. Firmware update functions eliminate the need to re-design or re-qualify new controllers to meet the requirements of new NAND flash technology introduced after the system has been put into production. This allows system manufacturers to optimize NAND costs, availability and performance requirements in the face of fast-changing NAND technologies. NUMONYX chosen as new name for pending STMicro and Intel flash memory companyIntel Corporation, STMicroelectronics and Francisco Partners have unveiled the company name of "Numonyx" for the pending independent semiconductor company announced on May 22. Numonyx, being created from the key assets of businesses that last year generated approximately $3.6 billion in combined annual revenue, will focus on supplying non-volatile memory solutions for a variety of consumer and industrial devices including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment. 
Device blends the key benefits of NOR, NAND and RAM in a unified architectureSST (Silicon Storage Technology has announced that it is sampling the first in its All-in-OneMemory product family, the SST88VP1107. By blending the key benefits of NOR, NAND and RAM in a unified architecture, the first All-in-OneMemory product comes configured with 512 KByte instant-on boot NOR, 128 MByte execute-in-place (XIP) code storage, 120 MByte data storage and 12 MByte system RAM for mobile and embedded applications. 
4GB microSDHC memory cardToshiba has expanded its line of small-format, high-speed, high-capacity memory cards with the announcement of the launch of a 4-gigabyte microSDHC card. The addition of the new card extends Toshiba's range of microSDHC cards, the preferred memory card for mobile phone applications, from 256MB up to 4GB. 
+125°C automotive FRAM memory from RamtronRamtron has expanded its line of FRAM Grade 1 automotive memory products with the qualification of an additional serial FRAM device to operate at +125 degrees Celsius (C). The FM25CL64-GA – a 3-volt, 64-kilobit (Kb) FRAM with a high-speed serial peripheral interface (SPI) – is now Grade 1 AEC-Q100 qualified, making it suitable for automotive applications under the hood, as well as many others in the passenger cab. In tandem with the product announcement, Ramtron upgraded its Grade 1 operating data retention specification to 9,000 hours, and its non-operating specification to 17 years, representing 80% and 17% improvements respectively. 
FRAM-based non-volatile state saversRamtron has launched what it says is the semiconductor industry's first non-volatile state saver – a device that saves the state of signals on demand and restores them to the correct state automatically upon power up. FRAM technology uniquely enables this capability due to its fast write time and virtually unlimited write endurance. Ramtron's new family of low-power, non-volatile state savers currently has two products: the FM1105, which operates at 5V, and the FM1106, which operates at 3V. Both devices are available in a small SOT23 package. Additional configurations are planned. 
Low-Power Advanced Memory BufferIDT (Integrated Device Technology, Inc.), has announced the third generation device in its Advanced Memory Buffer family, the Advanced Memory Buffer Plus (AMB+), which is said to offer the lowest power consumption available in the industry today - up to forty percent power savings over competitive AMB offerings. Compliant with the JEDEC AMB specifications, the IDT AMB+ device is an essential building block in Fully Buffered Dual In-line Memory Modules (FB-DIMM) for high-performance, low-power computing platforms. 
Memory subsystem blends key benefits of NOR, NAND, and RAM in a unified architectureSST has unveiled its All-in-OneMemory solution, a revolutionary memory subsystem that blends key benefits of NOR, NAND, and RAM in a unified architecture which offers multi-gigabyte of execute-in-place (XIP) code storage and satisfies the growing data storage needs of embedded applications. All-in-OneMemory technology provides a completely-managed memory subsystem for a wide range of embedded system applications, including multimedia-enabled cell phones, portable media players, digital still/video cameras, personal navigation devices, set-top boxes, IPTVs and industrial systems. By managing the system's key memory components in a single package, All-in-OneMemory simplifies the host interface, shortens design time, reduces overall system costs, and improves quality and reliability. 
STM's Serial EEPROM Families Now Available in 2 x 3mm MLP8 PackagesSTMicroelectronics has announced that all of its Serial EEPROM devices, from 2 to 64-Kbit density – and from both the SPI and I2C interface series – are now available in the tiny 2 x 3mm MLP8 package, compared to the predecessor 4 x 5mm S08N package, enabling significant space and cost savings for portable consumer and communications products. 
4-megabit non-volatile FRAM memory is industry first says RamtronRamtron has launched what it says is the first 4-megabit (Mb) FRAM memory – the highest-density FRAM product, with quadruple the FRAM memory capacity available to date. The FM22L16 is a 4Mb, 3-volt, parallel non-volatile RAM in a 44-pin thin small outline plastic (TSOP) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22L16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. 
Automotive-Grade 32-Mbit NOR Flash Memory from STMicroelectronicsSTMicroelectronics has announced the addition of a new 32-Mbit device which is Automotive Grade certified for operation over the full -40 to +125 degrees C temperature range. The M29W320 is intended particularly for dashboard systems, automotive multimedia and for other applications needing fast access to a large amount of code and data. 
STMicroelectronics Announces Availability of 1-Gbit and 512-Mbit 65nm Multi-Level Cell NOR Flash, with Smallest Die Size Available on the MarketSTMicroelectronics today announced the availability of the 65nm PR family of NOR Flash memory. Based on fourth-generation multi-level-cell (MLC) technology, the 65nm PR family is fully hardware and software compatible with the existing 90nm NOR Flash PR family, providing an easy migration path for customers, while offering increased memory density and improved performance. NAND Flash memory controller solution from QuickLogicQuickLogic Europe announces the introduction of a full featured NAND Flash memory controller solution for its ultra-low power programmable logic families. One of many storage solutions offered by QuickLogic, the NAND solution is designed to interface with a host of application processors used in portable applications, such as the Marvell PXA2xx applications processor and Analog Devices' Blackfin DSP. This introduction extends the spectrum of QuickLogic's storage solution portfolio from various flavours of micro hard disk drives and SD Card memory to raw NAND Flash. 
Microchip Expands Its 32 Kbit SPI Serial EEPROM Family With High-Speed, 10 MHz DevicesMicrochip has announce it has expanded its SPI serial EEPROM family with the 32 Kbit 25AA320A and 25LC320A devices. The new devices are capable of operating at bus speeds of up to 10MHz, and are available in a range of packages, including the very low-profile MSOP and TSSOP. The new devices also offer Microchip's high endurance, quality, on-time delivery and short lead times as standard. 
1Mbit Serial EEPROM in SO8 Narrow Package from STMicroelectronicsSTMicroelectronics has announced a new 1-Mbit serial EEPROM – the M24M01 – which is available in the tiny SO8N package with 150-mil (3.8mm) body width. This serial EEPROM is said to be the only device in the market to squeeze this high memory density into such a small package. Also offered in SO8W, the chip, with its I2C two-wire serial interface, is intended for applications such as consumer electronics products and medical equipment which needs to store large amounts of frequently changing parameter data. ST's I2C EEPROM family now offers 1-Kbit to 1-Mbit devices -the broadest portfolio on the market. Toshiba to Launch 56-Nanometer, 16-Gigabit NAND Flash MemoryToshiba Corporation, reinforcing its leadership in the development and fabrication of powerful, high density NAND flash memory, has announced the introduction of 16Gb (2 gigabyte) and 8Gb (1 gigabyte) NAND flash memory, fabricated with cutting-edge 56-nanometer process technology co-developed with SanDisk Corporation. 
Toshiba adds High Performance SDHC and High Capacity microSD CardsToshiba Electronics Europe (TEE) has announced the latest enhancement to its extensive line-up of SD Memory Cards: a 4-gigabyte (GB) Class 6 SDHC Card; a 4GB Class 4 miniSDHC Card; and a 2GB microSD Memory Card. The new SDHC and miniSDHC cards will be available worldwide from March, and the microSD will be launched worldwide during April. 
Ramtron’s FM25C160 16Kbit SPI FRAM memory device achieves AEC-Q100 qualificationRamtron International Corporation, has announced that its FM25C160 – a 16Kbit, 5V, SPI FRAM memory device – has been qualified to AEC-Q100 (Automotive Electronic Council's Stress Test Qualification for Integrated Circuits) standards. The FM25C160 is the third FRAM device to be AEC-Q100-qualified as part of its aggressive automotive qualification programme. Ramtron is also currently developing various FRAM configurations specified for the Grade 1 (-40 degrees to 125 degrees C) operating range. 
SST Extends Leadership in Low-Voltage, Low-Density Flash with Introduction of New 16-Mbit SolutionSST (Silicon Storage Technology, Inc.), today rounded out its 1.8V low-density flash product portfolio with the announcement of a 16 Mbit Multi-Purpose Flash Plus (MPF+) device. The SST39WF160x is the first 1.8V product in SST's MPF+ family. The devices, which are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology, complement the MPF+ product family with reduced power consumption, making them ideal for portable applications such as MP3 players and Bluetooth headsets. In addition to offering significant power savings, SST's 1.8V MPF+ devices are available in very small packages to address the space constraints faced by leading portable application manufacturers. 
STMicroelectronics Transitions NAND Flash Memory Family to 70nm TechnologySTMicroelectronics has announced full availability of its entire NAND Flash memory family in 70nm process technology. The transition of the 512-Mbit (Small Page) and 1/2/4/8-Gbit (Large Page) devices to ST's advanced 70nm manufacturing process establishes the family at the leading edge of NAND Flash technology, with lower prices and reduced power consumption. 
High Capacity 8GB SDHC Memory Card from ToshibaToshiba has announced the latest addition to its new series of high-capacity SDHC Memory Cards: the industry's first 8-gigabyte Class 4 memory card. The new card will be introduced in early January 2007, alongside the 4GB products launched in September, and will give Toshiba a larger commercially available line-up in high performance SD Memory Cards. 
16-Mbit Page-Erasable Serial Flash for PC BIOS ApplicationsSTMicroelectronics has announced the addition of a 16-Mbit memory chip with 4-Kbyte sectors to the page-erasable M25PE serial Flash family, which is ideal for PC BIOS applications as well as for optical disk drives, digital voice recorders, networking products and set-top boxes (STBs). The new M25PE16 is accessed through an SPI-compatible serial bus operating at up to 50MHz and is the first Serial Flash device from ST with 4 Kbyte subsectors. 
Ramtron pursuing AEC-Q100 automotive qualificationRamtron International Corporation has announced an AEC-Q100 automotive qualification programme for its FRAM devices. The company is aggressively pursuing plans to qualify its FRAM devices to AEC-Q100 (Automotive Electronic Council's Stress Test Qualification for Integrated Circuits) standards, and is developing a number of FRAM configurations specified for the Grade 1 (-40 degrees to 125 degrees C) operating range. This qualification programme has been developed to support a number of customer design-ins from in-cab applications to the vehicle's most stringent environments. 
Dane-Elec DRAM Memory module ranges increase for the Business, Home and Gaming marketsDane-Elec continues to add to its range of DRAM memory module products designed to meet the needs of most desktop and laptop personal computer users, as well as high-end servers and gaming products. With a fast reacting module manufacturing and assembly plant in Ireland, Dane-Elec is ideally placed to satisfy the memory requirements of the European PC industry. Orders can be taken as late as 17.00 for next day delivery. 
SST launches 1.8V Ultra Low Power, Ultra Thin SPI Serial Flash Memory FamilySST has unveiled a new family of SPI serial flash memory devices that boast the industry's smallest form factor and lowest power consumption. The new SST25WFxxx family is ideal for battery-powered, space- and height-constrained portable applications including wireless networks such as ZigBee, Bluetooth, WiFi, camera modules, portable media players, remote controls and portable VoIP products. The SST25WFxxx family continues SST's legacy of innovation in serial flash technology and expands the company's presence in the high-volume portable electronics market. 
16Kbit 3V serial FRAMRamtron International Corporation has announced that its FM24CL16 – a 16Kbit, 3V serial FRAM memory device – has been qualified to AEC-Q100 (Automotive Electronic Council's Stress Test Qualification for Integrated Circuits) standards. Ramtron is pursuing plans to grow a broad line of AEC-Q100-qualified FRAM products to meet the design and sourcing challenges of the automotive market. This qualification program has been developed to support a number of customer design-ins from in-cab applications to the vehicle's most stringent environments. 
FRAM with high-speed SPI interface increases data collection capacity in a tiny packageRamtron has launched the FM25L512, a 512 kilobit, 3V non-volatile FRAM device with a high-speed serial peripheral interface (SPI). The FM25L512 provides increased data collection and storage capacity in a tiny, 8-pin package, cutting costs and board space in a range of applications from multi-function printers to industrial motor controllers. 
8- and 16-Mbit Code-Storage Serial Flash Memory in SO8N Package is an ST Microelectronics firstSTMicroelectronics has announced the introduction of new high-speed 8- and 16-Mbit serial Flash memories in the market's smallest package for these densities: the SO8N. ST is the first to offer these compact, cost-effective devices in these packages, suitable for code storage in a range of cost-sensitive computer and consumer electronic products, such as printers, optical disk drives, Wireless LAN (WLAN) modules, and set-top boxes (STBs). 
Half megabit non-volatile FRAMRamtron has expanded its portfolio of serial memory products with the launch of the FM24C512, a half-megabit non-volatile FRAM product with an industry standard 2-wire serial interface. The FM24C512 is targeted for use in applications that require high capacity data collection such as utility metering and real-time configuration storage 
USB Flash Memory brings platform technology into Toshiba's USB lineupToshiba Electronics Europe has announced the forthcoming introduction of TransMemory USB Flash Memories that will bring U3 platform technology into the company's USB lineup and introduce a special-edition high-capacity USB memory. The four models in the TransMemory U3 series will be launched on the global market at the end of November, while the TransMemory 16GB Limited Edition will be available from the end of December, exclusively through Shop 1048, Toshiba's online shop. 
32-Mbit Flash Memory suits Automotive ApplicationsSTMicroelectronics has announced a version of its 32-Mbit Flash memory chip intended specifically for the automotive market. Offering high-speed memory access over a wide operating temperature range, the M58BW32F fits perfectly with automotive customers' needs for powertrain and transmission-control modules and for other high-performance automotive systems that use the latest generation of 32-bit microcontrollers. 
Flash-based NAND Controller Delivers Optimized Performance for Multi-Level Cell ApplicationsSST has announced a new flash-based NAND Controller that provides optimized performance for multi-level cell (MLC) NAND flash devices. The SST55LD019M is ideal for use in space-constrained consumer applications where NAND flash is replacing traditional hard disk drives. The SST55LD019M NAND Controller is tailored to support high-volume applications and is offered in the industry's smallest package. 
Cost-Saving Address-Data Multiplexed NOR Flash Memory Solutions for Mobile ApplicationsSTMicroelectronics applications has announced a new family of Address-Data Multiplexed Input/Output devices – a complete range of NOR Flash memory solutions tailored specifically for cost-efficient, value-sensitive mobile platforms. 
High-Reliability Serial Flash Memory Devices Designed Specifically for the Automotive MarketSTMicroelectronics has announced a new generation of its serial Flash memory chips, with densities from 1 to 4 Mbit, which are intended specifically for demanding automotive applications with high reliability requirements. The new M25P10-A, M25P20 and M25P40 (1 Mbit, 2 Mbit and 4 Mbit, respectively) – are thought to be the first serial Flash devices tough enough to be specified and made available for the automotive environment. ST announces 1, 2 and 4-Mbit Serial Flash memories for the Automotive MarketSTMicroelectronics has announced a new generation of its serial Flash memory chips, with densities from 1 to 4 Mbit, which are intended specifically for demanding automotive applications with high reliability requirements. 
2GB miniSD memory card announced by ToshibaToshiba Electronics Europe (TEE) has announced an expanded line-up of large capacity miniSD memory cards with the introduction of a 2GB capacity card. The new Toshiba-branded miniSD card will be available from mid-June 2006. 
Ramtron's FRAM technology will make auto airbags smartRamtron International has announced that Hyundai Autonet of Korea has selected its non-volatile FRAM memory technology for smart airbags and occupant sensors in Hyundai automobiles among others. FRAM's unparalleled write endurance along with its fast data collection capability makes it an ideal non-volatile memory technology for today's sophisticated airbag systems. 
High Speed, low power 8Mbit SRAM is designed for cost-sensitive portable product applicationsSilicon7 has introduced the latest version of its 8Mbit high speed, low power SRAM and it will interest designers working on portable electronic products that are less memory demanding than many feature rich products. Storage peripheral solution for portable consumer productsQuickLogic Europe announces that its low-power QuickIDE bus-to-bus bridging IC interoperates with Hitachi Global Storage Technologies' one-inch Microdrive hard drive, delivering a complete mass storage peripheral solution for portable consumer products based on Intel embedded processors. ISi Announces Silicon Validation of Z-RAM TechnologyInnovative Silicon Inc. (ISi), the developer of Z-RAM™ high density memory IP, has announced that it has achieved silicon validation of Z-RAM memory arrays on 90nm SOI process technologies. The company also announced that it has validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SOI, 90nm SOI, and FinFET technologies. The company expects to demonstrate working silicon in multiple 65nm processes later this quarter. Zero capacitor memory technology proved realisable on FinFET/TriGate device geometriesIn a paper given by Innovative Silicon Inc. (ISi) at the recent IEEE SOI Conference, the company claims to prove the manufacturability of its Z-RAM (zero capacitor) embedded memory technology in FinFET and TriGate devices with geometries below 45nm. |
Headlines
 |
